Available only in 120GB and 250GB capacities
While it was already spotted a while back, Samsung has now officially announced its new 750 EVO series which will be based on Samsung's 16nm TLC NAND and only be available in 120GB and 250GB capacities.
Featured in upcoming second-gen Galaxy J7 (2016)
On Tuesday, Samsung announced the newest member of its Exynos 7 Octa processor lineup, the Exynos 7 Octa 7870. This SoC is built on the company’s 14-nanometer Low-Power-Plus (LPP) FinFET process technology for next-generation midrange smartphones and will compete with Qualcomm’s recently announced 14-nanometer Snapdragon 625 eight-core SoC.
Other Galaxy devices to follow soon
On Monday, Samsung brought its current flagship Galaxy S6 and S6 Edge smartphones into the modern era with updates for Android 6.0.1 Marshmallow to each device, according to a company press release.
Also features wireless charging
A recent leak from Samsung’s Indonesia branch has just given reason to suggest that the company’s soon to be announced Galaxy S7 flagship smartphone will be completely waterproof and will include wireless charging.
Wants plenty for the Galaxy S7 edge
Samsung Display is planning to crank up production of AMOLED display panels for the company’s flagship smartphones that are due to be unveiled on February 21.
Embedded in Android
Software king of the world Microsoft will bundle its mobile productivity suite of apps onto Acer’s Android-based smartphones and tablets.
Puts all 10nm eggs in TSMC’s basket
Fruity cargo cult Apple has turned on its partner Samsung and given the contract to produce 10-nano application processors (AP) to TSMC.
Getting you through the day
Samsung Galaxy S7 and S7 Edge will launch in just 11 days from now, a day before the Mobile World Congress 2016 in Barcelona and it is starting to look like the Galaxy S7 Edge will have a 3600 mAh battery.
Transistor performance lagging
The naming game for the next generation of chipmaking actually covers up the fact that Intel is probably not ahead of the foundries in terms of transistor performance.