Featured Articles

5th Generation Broadwell 14nm family comes in three lines

5th Generation Broadwell 14nm family comes in three lines

Intel's 5th Core processor family, codenamed Broadwell, will launch in three lines for the mobile segment. We are talking about upcoming…

More...
Broadwell Chromebooks coming in late Q1 2015

Broadwell Chromebooks coming in late Q1 2015

Google's Chromebook OS should be updating automatically every six weeks, but Intel doesn't come close with its hardware refresh schedule.

More...
New round of Nexus phone rumour kicks off

New round of Nexus phone rumour kicks off

Rumours involving upcoming Nexus devices are nothing uncommon, but this year there is a fair bit of confusion, especially on the…

More...
Nvidia officially launches the 8-inch Shield Tablet

Nvidia officially launches the 8-inch Shield Tablet

As expected and reported earlier, Nvidia has now officially announced its newest Shield device, the new 8-inch Shield Tablet. While the…

More...
Aerocool Dead Silence reviewed

Aerocool Dead Silence reviewed

Aerocool is well known for its gamer cases with aggressive styling. However, the Dead Silence chassis offers consumers a new choice,…

More...
Frontpage Slideshow | Copyright © 2006-2010 orks, a business unit of Nuevvo Webware Ltd.
Monday, 21 May 2012 12:19

Boffins work out way for super fast ReRAM

Written by Nick Farrell



Built from pure silicon oxide


Boffins at UCL have developed the first purely silicon oxide based resistive ram (ReRAM) memory chip. The chip can operate in ambient conditions and could be the next thing for super fast memory.

ReRAM memory chips are based on materials whose electrical resistance changes when a voltage is applied, so they can retain data without power. These chips promise significantly greater storage capacity than current technology with less energy and space. Dr Tony Kenyon, UCL electronic and electrical engineering said that his ReRAM memory chips need just a thousandth of the energy and are around a hundred times faster than standard flash memory chips.

The fact that the device can operate in ambient conditions and has a continuously variable resistance opens up a huge range of potential applications. Unlike other silicon oxide chips in development, the team says its devices do not require a vacuum to work and are therefore potentially cheaper and more durable.

blog comments powered by Disqus

 

Facebook activity

Latest Commented Articles

Recent Comments