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Tuesday, 14 August 2012 08:34

ARM inks deal with Globalfoundries

Written by Nedim Hadzic

arm logoglobalfoundries

For 20nm and 14nm FinFET technologies

Chip designer ARM and Globalfoundries have inked a multi-year contract ensuring that ARM’s next gen SoCs will be made in Globalfoundries’ 20nm and upcoming 14nm processes that will use FinFET transistors..

20nm test samples are already in Globalfoundries’ fab in Malta, New York. The deal aims to provide customers with 20nm designs and promote migration to three-dimensional FinFET transistor tech at 14nm and beyond.

Under the deal, ARM will develop its Artisan physical IP platform, together with standard cell libraries, memory compilers and POP (processor optimization package) IP solutions.  The contract will also include Mali graphics processors.

Globalfoundries is to develop optimized implementations and benchmarks for ARM’s next-gen Cortex processors and Mali graphics processors. It will build on the existing Artisan physical IP platforms for existing processes.

Globalfoundries’ 20nm-LPM technology should bring up to 40 percent performance increase and double the gate density of 28nm. Additionally, the collaboration will include Globalfoundries’ FinFET based technology that will provide a rapid migration path from 20nm-LPM, thanks to the companies’ efforts in optimization of physical IP and process technologies.

Globalfoundries’ executive VP at worldwide marketing and sales Mike Noonen said:”By leveraging our implementation knowledge and applying it to a next-generation, energy-efficient ARM processor and graphics processing unit, we believe we can jointly offer a compelling differentiation to our mutual customers that will power innovation into the next two generations”. ARM’s executive VP and general manager of processor and physical IP divisions Simon Segars said:”By proactively working together to enable next-generation 20nm-LPM and FinFET process technologies, our mutual customers can be assured a range of implementation options that will enable two more generations of advanced semiconductor devices."

More here.

Last modified on Tuesday, 14 August 2012 10:01
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