Featured Articles

TSMC: Volume production of 16nm FinFET in 2H 2015

TSMC: Volume production of 16nm FinFET in 2H 2015

TSMC has announced that it will begin volume production of 16nm FinFET products in the second half of 2015, in late…

More...
AMD misses earnings targets, announces layoffs

AMD misses earnings targets, announces layoffs

AMD has missed earnings targets and is planning a substantial job cuts. The company reported quarterly earnings yesterday and the street is…

More...
Did Google botch the Nexus 6 and Nexus 9?

Did Google botch the Nexus 6 and Nexus 9?

As expected, Google has finally released the eagerly awaited Nexus 6 phablet and its first 64-bit device, the Nexus 9 tablet.

More...
Gainward GTX 970 Phantom previewed

Gainward GTX 970 Phantom previewed

Nvidia has released two new graphics cards based on its latest Maxwell GPU architecture. The Geforce GTX 970 and Geforce GTX…

More...
EVGA GTX 970 SC ACX 2.0 reviewed

EVGA GTX 970 SC ACX 2.0 reviewed

Nvidia has released two new graphics cards based on its latest Maxwell GPU architecture. The Geforce GTX 970 and Geforce GTX…

More...
Frontpage Slideshow | Copyright © 2006-2010 orks, a business unit of Nuevvo Webware Ltd.
Thursday, 15 November 2012 11:25

Everspin comes up with non-volatile magnetic RAM

Written by Nick Farrell



500 times faster than NAND


Everspin has announced that it’s shipping the first 64Mb ST-MRAM in a DDR3-compatible module.

According to its press release the MRAM (Magnetoresistive Random Access Memory) transfer data at DDR3-1600 clock rates, but access latencies are much lower than flash RAM. This means that they can manage 500 times the performance of  conventional NAND. It works by using a single magnetic tunnel junction (MTJ) and one transistor. When power comes on spin-polarized electrons tunnel through the dielectric barrier. The angular momentum of the electrons is transferred to the magnetic layer, “flipping” the polarisation. The cell is read by measuring its resistance.

The advantage is that the spin-torque technology uses much less power for writes than conventional MRAM and can be scaled. Once the data has been written, cells don’t need to be refreshed. MRAM retains its data if the power is turned off, and it doesn’t draw power to retain data during active system operation.

You can check out the geeky details here.

blog comments powered by Disqus

 

Facebook activity

Latest Commented Articles

Recent Comments