Featured Articles

5th Generation Broadwell 14nm family comes in three lines

5th Generation Broadwell 14nm family comes in three lines

Intel's 5th Core processor family, codenamed Broadwell, will launch in three lines for the mobile segment. We are talking about upcoming…

More...
Broadwell Chromebooks coming in late Q1 2015

Broadwell Chromebooks coming in late Q1 2015

Google's Chromebook OS should be updating automatically every six weeks, but Intel doesn't come close with its hardware refresh schedule.

More...
New round of Nexus phone rumour kicks off

New round of Nexus phone rumour kicks off

Rumours involving upcoming Nexus devices are nothing uncommon, but this year there is a fair bit of confusion, especially on the…

More...
Nvidia officially launches the 8-inch Shield Tablet

Nvidia officially launches the 8-inch Shield Tablet

As expected and reported earlier, Nvidia has now officially announced its newest Shield device, the new 8-inch Shield Tablet. While the…

More...
Aerocool Dead Silence reviewed

Aerocool Dead Silence reviewed

Aerocool is well known for its gamer cases with aggressive styling. However, the Dead Silence chassis offers consumers a new choice,…

More...
Frontpage Slideshow | Copyright © 2006-2010 orks, a business unit of Nuevvo Webware Ltd.
Thursday, 15 November 2012 11:25

Everspin comes up with non-volatile magnetic RAM

Written by Nick Farrell



500 times faster than NAND


Everspin has announced that it’s shipping the first 64Mb ST-MRAM in a DDR3-compatible module.

According to its press release the MRAM (Magnetoresistive Random Access Memory) transfer data at DDR3-1600 clock rates, but access latencies are much lower than flash RAM. This means that they can manage 500 times the performance of  conventional NAND. It works by using a single magnetic tunnel junction (MTJ) and one transistor. When power comes on spin-polarized electrons tunnel through the dielectric barrier. The angular momentum of the electrons is transferred to the magnetic layer, “flipping” the polarisation. The cell is read by measuring its resistance.

The advantage is that the spin-torque technology uses much less power for writes than conventional MRAM and can be scaled. Once the data has been written, cells don’t need to be refreshed. MRAM retains its data if the power is turned off, and it doesn’t draw power to retain data during active system operation.

You can check out the geeky details here.

blog comments powered by Disqus

 

Facebook activity

Latest Commented Articles

Recent Comments