Published in Processors

Samsung readies 28nm MRAM chips

by on27 September 2017

FD-SOI sauce 

Samsung Foundry will soon mass produce magnetoresistive random-access memory (MRAM) chips  using 28nm fully depleted silicon-on-insulator (FD-SOI) process technology.

Samsung is reportedly teaming up with NXP and has completed the tape-out of its 28nm FD-SOI embedded MRAM, which will be first applied to NXP's new low-power module.  The memory will be aimed at the automotive, multimedia and display panel applications.

Synopsys announced its Design Platform has been fully certified for use on Samsung Foundry's 28nm FD-SOI process technology. It said that a PDK and a comprehensive reference flow, compatible with Synopsys' Lynx Design System, containing scripts, design methodologies and best practices is now available.

Samsung's foundry solutions team senior VP Jaehong Park said Samsung Foundry's 28FD-SOI technology allows designs to operate both at high and low voltage making it ideal for IoT and mobile applications.

"The FD-SOI technology exhibits the best soft error immunity, and, therefore, is well suited for applications that require high reliability such as automotive", Park said.

Last modified on 27 September 2017
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