Featured Articles

5th Generation Broadwell 14nm family comes in three lines

5th Generation Broadwell 14nm family comes in three lines

Intel's 5th Core processor family, codenamed Broadwell, will launch in three lines for the mobile segment. We are talking about upcoming…

More...
Broadwell Chromebooks coming in late Q1 2015

Broadwell Chromebooks coming in late Q1 2015

Google's Chromebook OS should be updating automatically every six weeks, but Intel doesn't come close with its hardware refresh schedule.

More...
New round of Nexus phone rumour kicks off

New round of Nexus phone rumour kicks off

Rumours involving upcoming Nexus devices are nothing uncommon, but this year there is a fair bit of confusion, especially on the…

More...
Nvidia officially launches the 8-inch Shield Tablet

Nvidia officially launches the 8-inch Shield Tablet

As expected and reported earlier, Nvidia has now officially announced its newest Shield device, the new 8-inch Shield Tablet. While the…

More...
Aerocool Dead Silence reviewed

Aerocool Dead Silence reviewed

Aerocool is well known for its gamer cases with aggressive styling. However, the Dead Silence chassis offers consumers a new choice,…

More...
Frontpage Slideshow | Copyright © 2006-2010 orks, a business unit of Nuevvo Webware Ltd.
Monday, 27 April 2009 18:40

Toshiba and SanDisk sample 32nm NAND flash

Written by Jon Worrel

Image

20-30 nanometer chips around late 2010


At the
recent nanotech 2009 expo (INEC), partners Toshiba and SanDisk revealed a 300mm wafer with 32nm, 32-gigabit (4GB) NAND flash memory chips. Toshiba announced that is has already begun shipping samples out to its partners, with volume production of 32nm memory expected this September.

The NAND flash memory chips are based on 3-bit-per-cell architecture, which allows Toshiba to advance its cutting edge reputation by cramming more transistors into the world’s smallest die size. The company has said there are not any significant changes when compared to its current 2-bit-per-cell, 43nm wafers, which used a similar floating gate structure to manage the flow of power.

However, the 3-bit-per-cell generation devices use an optimized circuit design to deal with an extremely small write margin that comes as a result of dividing the threshold voltage in eight. For now, the company can deliver 32Gb (4GB) chips, but is planning to also sample 64Gb (8GB) products in July. This puts mass production of 32nm NAND products two months ahead of schedule. As the year progresses, 8GB 32nm chips are expected to start shipping out in Q4.

Toshiba also commented that it will begin production of memory in the 20-30 nanometer range around late 2010 or early 2011. Currently, its engineers are researching the possibility of maintaining a floating gate structure at smaller fabrications, or if they will need to shift to a new nitride trap to achieve the same effect. It has been speculated that floating gate transistors have reached their shrinkable limit with the ~30nm fabrications due to inter-cell interference. Yet only precious time and valuable research will determine the decision for the next leap in memory technology of such small magnitude.

Last modified on Monday, 27 April 2009 20:02
blog comments powered by Disqus

 

Facebook activity

Latest Commented Articles

Recent Comments