Smaller layered chips
Semiconductor maker Micron said it has introduced its first 3D NAND memory for mobile devices and products based on Universal Flash Storage (UFS) 2.1.
Deals going ahead despite delays
Deals between DRAM makers Nanya Technology and Inotera Memories with Micron to work closer together have been reached despite some last minute delays.
DRAM prices continue to fall
Micron is going to tell its staff "thanks for the memory" and tell them to clear off, after an initial wave of restructuring failed to do the job.
Coming in PCIe/NVMEe, SATA and M.2 and 2.5-inch form-factors
Micron has announced its first client- and OEM-oriented solid-state drives based on 3D NAND, the Micron 1100 and Micron 2100 series.
Up to 3.0GB/s reads, 2.0GB/s writes, XPERT loss prevention algorithm
Last week, Micron Technology Inc. hosted a live morning webcast during which company executives announced a new lineup of enterprise NVMe-based PCI-E SSDs for data center customers featuring both the HHHL (half height, half length) form factor, the M.2 form factor and the slimmer, 7mm-tall U.2 (2.5-inch) hot-pluggable form factor.
Samsung already has mass production
Chaps from the memory manufacturers that like to talk to Fudzilla have confirmed that 8Gbit GDDR5 memory will hit volume production in the second half of 2016.
Wants market share over profits
Samsung Electronics changing its approach to its memory chip business and focus on market share over profit margins and the industry will suffer, according to one analyst.
Invites Micron to lend a hand
The Chinese government's Tsinghua Unigroup is going to build its own DRAM fab and has asked Micron to be involved.
To double the bandwidth
Just a few days after it has officially published the 2nd generation High Bandwidth Memory (HBM2) specification, JEDEC has now officially published the GDDR5X memory standard.