Chinese memory maker CXMT has pushed its fifth-generation DRAM platform into mass production, claiming tighter features, lower costs and fatter wafer yields.
According to Reuters, the Hefei-based outfit said the new process reduces spacing between key memory-cell features to 11.95 nanometres, packing more storage onto each chip.
CXMT achieved the shrink using quadruple patterning, which repeats several manufacturing steps to create circuit patterns finer than its existing equipment could otherwise manage.
CXMT vice-president and marketing centre head Luo Xiaodong said: “Our process capability is now on par with the most advanced mass-produced nodes out there in the industry.”
The company unveiled two 24-gigabit LPDDR5X products built using the new platform at the 2026 World Manufacturing Convention in Hefei. LPDDR5X is low-power DRAM aimed mainly at smartphones and other portable kit. CXMT said the new chips hold 50 per cent more data than its previous equivalent products.
Both products are already in mass production and come in two package formats intended for different handset and portable-device designs.
CXMT reckons its fifth-generation platform can produce at least 50 per cent more gross chip dies from each wafer than its fourth-generation process, using an 8-gigabit chip as the baseline. That figure measures how many potential dies fit on a wafer before defective parts are weeded out, rather than the percentage surviving final testing.
CXMT said it developed the process using computer simulations and joint work with Chinese chip-equipment manufacturers on critical production stages. The move gives Chinese electronics makers another domestic DRAM source as Beijing tries to reduce its reliance on foreign semiconductor technology amid US export controls imposed since 2022.
