SK hynix is flogging faster phone memory and hoping you will call it progress rather than another spec sheet flex.
The outfit says it has successfully developed a 16Gb LPDDR6 DRAM using its sixth-generation 10nm-class 1c process, pushing speeds up to 10.7Gbps.
That headline figure is pitched as a 33 per cent jump in data processing speed versus LPDDR5X, thanks to wider bandwidth and more data pushed per unit time.
SK hynix claims it has validated the 1c LPDDR6 design, after first showing the product at CES in January.
It plans to finish mass production prep in the first half of the year, then start supplying in the second half, which is when the real arguments about binning begin.
The target is mobile kit like smartphones and tablets that run on-device AI, because everything is AI now, even when it is just memory shifting bits.
Power draw is meant to drop by more than 20 per cent compared with the previous generation, using a sub-channel structure and DVFS.
The sub-channel approach is supposed to light up only the data paths that matter, while DVFS dials frequency and voltage up for demanding work and down when you are just doomscrolling.
SK hynix reckons users will see longer battery life and smoother multitasking, a promise every memory launch has made since the first handset started stuttering.
