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Samsung starts 2nd-gen 10nm FinFET mass production

by on29 November 2017

Switching from 10nm LPE to 10nm LPP

Samsung has announced that it has geared up into mass production of its 2nd generation 10nm FinFET manufacturing process technology, moving from 10nm LPE (Low Power Early) to 10nm LPP (Low Power Plus).

While it did not provide a lot of details, Samsung claims that the 10nm LPP will bring up to 10 percent higher performance or 15 percent lower power consumption when compared to the 10nm LPE. The company also claims that this 2nd generation 10nm FinFET process technology also reduces the time from development to mass production and provides significantly higher manufacturing yield.

According to Ryan Lee, VP of Foundry Marketing at Samsung Electronics, the company will be able to better serve its customers through the migration from 10nm LPE to 10nm LPP with improved performance and higher initial yield and will continue to work on the evolution of 10nm technology down to 8nm LPP process.

Samsung also took the opportunity to announce its newest S3 manufacturing line at Hwaseong, Korea, which is ready for production of 10nm and below as well as the future 7nm FinFET EUV (Extreme Ultra Violet) manufacturing process.

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Last modified on 29 November 2017
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