Samsung showed off the first 3D TSV DDR4 DRAM (64GB) in 2014 and it was claimed that the new memory modules were a breakthrough in capacity and in energy efficiency.

They will not be headed for your PC. The modules are aimed at enterprise servers and data centres.

In a statement, Samsung said that the high-speed, low-power 128GB TSV DRAM module will enable its global IT customers and partners to launch a new generation of enterprise solutions with dramatically improved efficiency and scalability for their investment.

TSV advanced circuitry connects the chip components using "hundreds of fine holes and vertically connected by electrodes passing through the holes, allowing for a significant boost in signal transmission." This replaces the traditional wire bonding,  Samsung sang.

A single 128GB TSV DDR4 RDIMM is composed of 144x DDR4 chips is arranged into 36x 4GB DRAM packages which contain 4x 8Gb chips built on Samsung's 20nm process.

A master chip on each 4GB package embeds the data buffer function to optimise module performance and power consumption.

This means that Server performance can be enhanced with the new 128GB modules facilitating data transfer speeds up to 2,400Mbps which is about twice the performance of servers using 64GB LRDIMMs. It also slashes power by half.

TSV DRAM technology will continue to be pushed at Samsung to bring out new modules with data transfer speeds of up to 2,667Mbps and 3,200Mbps for enterprise server performance enhancements.

Samsung intends to bring TSV tech into high bandwidth memory (HBM) and consumer products eventually.