Published in Memory

Samsung develops world's first 4Gb DDR3 chip

by on30 January 2009


50nm, up to 1600MHz, highest-density ever

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n September, Samsung announced its development of the world's first 50nm 2GB DDR3 memory.  This morning, the world’s largest consumer electronics company just announced that it has doubled the previous density and has developed the world’s first 4Gbit DDR3 memory chip, based on 50nm process technology.

The new 4Gbit DDR3 memory is designed to be low-powered and operates at 1.35v, which is a 20% improvement over 1.5v modules. On another note, its maximum speed is rated to be DDR3 1600MHz.  In 16GB module configurations, the new memory can consume 40% less power than 2GB DDR3 due to its higher density and because it uses only 32 chips instead of 64.

Before anyone sticks six of these in their X58-based desktop, keep in mind that Samsung originally intends these modules to be used for the new generation of "green" servers, which combined with lower power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.

However, the new memory can be also be produced in 8GB unbuffered DIMMs for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, Samsung can create modules up to 32GB, which is twice the capacity it was able to do previously on its 2GB DDR3 chips.

"We have leveraged our strength in innovation to develop the first 4GB DDR3, in leading the industry to higher DRAM densities," said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc. "By designing our 4GB DDR3 using state-of-the-art 50nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market," he added.

Furthermore, Samsung’s press release was released on January 29th and can be found here.

Last modified on 30 January 2009
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