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Toshiba reveals 19nm NAND flash

by on21 April 2011

Aims to deliver 128Gb devices for smartphoness
Toshiba has unveiled new fabricated NAND flash memories using 19nm process technology.

According to a press release the new technology has been applied to 2-bit-per-cell 64GB chips that offer the highest density on an 8GB single chip. Tosh said that it will also add 3-bit-per-cell products fabricated with the 19nm process technology to its product line-up.

The 2-bit-per-cell 64Gb will be available from the end of April with mass production scheduled for the third quarter of the year. The memory maker claims that the 19nm generation process technology will shrink chip size, allowing it to assemble sixteen 64GB NAND flash memory chips in one package and to deliver 128GB devices for application in smartphones and tablets.

The 19nm process products are also equipped with Toggle DDR2.0, which will enhance data transfer speed, the outfit claimed.
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