The new 512 gigabit, 64-layer device has three-bit-per-cell triple-level cell (TLC) technology and will be part of Tosh’s BiCS FLASH product line. This technology will enable a 1-terabyte chip solution later this year.
For those who came in late, BiCS FLASH is a 3D flash memory stacked cell structure.
Sample shipments of the new 512Gb devices have begun, with mass production scheduled for the second half of 2017.
The new flash memory product has 65 percent greater capacity than the previous generation technology, which used 48 layers of NAND flash cells.
In addition to the new 512Gb device, Toshiba’s BiCS FLASH lineup also includes a 64-layer 256Gb offering, which is currently in mass production.
According to Scott Nelson, senior vice president of TAEC’s memory business unit, “The introduction of our third generation BiCS FLASH coupled with the industry’s largest 1TB chip solution strongly reinforces Toshiba’s flash leadership position. These innovations underline our commitment to developing leading-edge memory solutions, and we will continue to advance our 3D technology to meet the ever-increasing storage market demand.”
The chip will be used in data centres but also consumer SSD products so it could be cheap enough to get into high-end gaming rigs.
This announcement comes as Toshiba talks about off-loading its lucrative SSD operations to pay for the accounting fiasco and the dodgy nuclear power plant deal it lost billions on.
A previous report about Western Digital, Foxxcon, SK Hynix and Micron Technology have now also thrown their hats in the ring to purchase a majority share in Toshiba's memory spin-off.