Published in PC Hardware

Samsung speeds up embedded universal Flash storage

by on27 February 2019

Next-generation 512GB eUFS 3.0 chips

Samsung has jacked up the speed of its embedded universal Flash storage and released the next generation 512GB eUFS 3.0 chips.

 The outfit said that the next generation chips will hit mass production today.

Apparently, the new memory chip can reach up to 2,100Mbps of read rate and up to 410Mbps of sequential write speed. Much depends on whether it is going downhill all has the wind behind it.

Upcoming devices that will be integrated with the new eUFS 3.0 chip can stack up against modern ultra-slim laptops, Samsung claims.

It can enable users to transfer a 3.7GB Full HD movie from a phone to a PC in as fast as three seconds.

The 512GB chip is twice as fast as Samsung's 1TB eUFS 2.1 memory, which was produced last month. That chip can reach only up to 1,000Mbps of sequential read speed and up to 260Mbps of sequential write speeds.

Samsung said the 512GB eUFS 3.0 chip will roll out before the end of this month along with the 128GB version.

The company wants to begin manufacturing 256 GB and one terabyte versions from the second half of 2019.

Last modified on 27 February 2019
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