Low power MRAM

Samsung has demonstrated the world’s first in-memory computing based on Magnetoresistive Random Access Memory (MRAM).

Unless it is all spin

Magnetoresistive random access memory (MRAM) is being touted as the next big thing for tech, even if manipulating MRAM efficiently and effectively is challenging.

FD-SOI sauce 

Samsung Foundry will soon mass produce magnetoresistive random-access memory (MRAM) chips  using 28nm fully depleted silicon-on-insulator (FD-SOI) process technology.